AO4629 30v complementary mosfet general description product summary n-channel p-channel v ds = 30v -30v i d = 6a (v gs =10v) -5.5a (v gs =-10v) r ds(on) r ds(on) < 30m ? (v gs =10v) < 41m ? (v gs =-10v) < 42m ? (v gs =4.5v) < 74m ? (v gs =-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested AO4629 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this complementary n and p channel mosfet configuration is ideal for low input voltage inverter applications. soic-8 top view bottom view g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 d1 s1 g2 d2 s2 symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl -30 drain-source voltage 30 v units parameter 1.3 30 10 5 2 2 1.3 c/w r q ja 48 -4.5 -25 mj units 62.5 17 14 parameter typ max v w c aa 20 -5.5 thermal characteristics 20 t a =70c avalanche current c junction and storage temperature range -55 to 150 t a =25c t a =70c 65 absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel gate-source voltage maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 40 74 90 power dissipation b p d pulsed drain current c continuous drain current t a =25c avalanche energy l=0.1mh c i d maximum junction-to-ambient a soic-8 top view bottom view pin1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 d1 s1 g2 d2 s2 n-channel p-channel rev 2: nov 2011 www.aosmd.com page 1 of 9
AO4629 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 uses 100 na v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 30 a 25 30 t j =125c 40 48 33 42 m w g fs 15 s v sd 0.76 1 v i s 2.5 a c iss 255 310 pf c oss 45 pf c rss 35 50 pf r g 1.6 3.25 4.9 w q g (10v) 4 5.2 6.3 nc q g (4.5v) 2 2.55 3.2 nc q gs 0.85 nc q gd 1.3 nc t d(on) 4.5 ns t r 2.5 ns drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =6a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =6a v gs =4.5v, i d =5a gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =6a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =15v, r l =2.5 w , t r 2.5 ns t d(off) 14.5 ns t f 3.5 ns t rr 8.5 12 ns q rr 2.2 3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =6a, di/dt=100a/ m s turn-off fall time body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 2: nov 2011 www.aosmd.com page 2 of 9
AO4629 n-channel: typical electrical and thermal characteri stics 17 52 10 0 18 0 3 6 9 12 15 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 15 20 25 30 35 40 45 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =5a v gs =10v i d =6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 10v 4v 4.5v 6v 18 40 0 3 6 9 12 15 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 15 20 25 30 35 40 45 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =5a v gs =10v i d =6a 20 40 60 80 100 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =6a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 10v 4v 4.5v 6v rev 2: nov 2011 www.aosmd.com page 3 of 9
AO4629 n-channel: typical electrical and thermal characteri stics 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =6a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =6a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d single pulse rev 2: nov 2011 www.aosmd.com page 4 of 9
AO4629 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off id l vds bv unclamped inductive switching (uis) test circuit & w aveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & w aveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 2: nov 2011 www.aosmd.com page 5 of 9
AO4629 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 uses 100 na v gs(th) gate threshold voltage -1.5 -2 -2.5 v i d(on) -25 a 32 41 t j =125c 47 58 51 74 m w g fs 13 s v sd -0.76 -1 v i s -2.5 a c iss 520 pf c oss 100 pf c rss 65 pf r g 3.5 7.5 11.5 w q g (10v) 9.2 11 nc q g (4.5v) 4.6 6 nc q gs 1.6 nc q gd 2.2 nc t d(on) 7.5 ns t r 5.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =-10v, v ds =-15v, r l =2.7 w , total gate charge v gs =-10v, v ds =-15v, i d =-5.5a gate source charge gate drain charge total gate charge i s =-1a,v gs =0v v ds =-5v, i d =-5.5a v gs =-4.5v, i d =-4.5a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5.5a r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 5.5 ns t d(off) 19 ns t f 7 ns t rr 11 ns q rr 5.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-5.5a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.7 w , r gen =3 w turn-off fall time i f =-5.5a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 2: nov 2011 www.aosmd.com page 6 of 9
AO4629 p-channel: typical electrical and thermal characteri stics 17 52 10 0 18 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 60 70 80 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-4.5a v gs =-10v i d =-5.5a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v -10v -4.5v - 5v - 8v 18 40 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 20 30 40 50 60 70 80 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-4.5a v gs =-10v i d =-5.5a 20 40 60 80 100 120 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v i d =-5.5a 25 c 125 c 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v -10v -4.5v - 5v - 8v rev 2: nov 2011 www.aosmd.com page 7 of 9
AO4629 p-channel: typical electrical and thermal characteri stics 0 2 4 6 8 10 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-5.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-5.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d single pulse rev 2: nov 2011 www.aosmd.com page 8 of 9
AO4629 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & w aveform - + - + -10v id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & w aveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 2: nov 2011 www.aosmd.com page 9 of 9
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